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RMPA1967

Features: · Single positive-supply operation and low power and shutdown modes· 40% CDMA/WCDMA efficiency at +28 dBm average output power· Compact lead-free compliant, LCC package- (3.0 x 3.0 x 1.0 mm nominal)· Internally matched to 50 Ohms and DC blocked RF input/output· Meets CDMA2000-1XRTT/WCDMA...

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RMPA1967: Features: · Single positive-supply operation and low power and shutdown modes· 40% CDMA/WCDMA efficiency at +28 dBm average output power· Compact lead-free compliant, LCC package- (3.0 x 3.0 x 1.0 m...

RMPA1967 Data Sheet

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Part Number:
RMPA1967
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/21

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Product Details

Description



Features:

· Single positive-supply operation and low power and shutdown modes
· 40% CDMA/WCDMA efficiency at +28 dBm average output power
· Compact lead-free compliant, LCC package- (3.0 x 3.0 x 1.0 mm nominal)
· Internally matched to 50 Ohms and DC blocked RF input/output
· Meets CDMA2000-1XRTT/WCDMA performance requirements
· Meets HSDPA performance requirements
· Alternative pin-out to Fairchild RMPA1965


Specifications

Parameter Symbol Value Units
Supply Voltages Vcc1, Vcc2 5.0 V
Reference Voltage Vref 2.6 to 3.5 V
Power Control Voltage Vmode 3.5 V
RF Input Power Pin +10 dBm
Storage Temperature Tstg -55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.


Description

The RMPA1967 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2-stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage.

High power-added efficiency and excellent linearity are achieved using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.




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