RMPA2263

Features: ` 40% WCDMA efficiency at +28 dBm Pout` 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout` Linear operation in low-power mode up to +19 dBm` Low quiescent current (Iccq): 25 mA in low-power mode` Meets UMTS/WCDMA performance requirements` Meets HSDPA performance requirements` Si...

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SeekIC No. : 004478207 Detail

RMPA2263: Features: ` 40% WCDMA efficiency at +28 dBm Pout` 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout` Linear operation in low-power mode up to +19 dBm` Low quiescent current (Iccq): 25 mA in...

floor Price/Ceiling Price

Part Number:
RMPA2263
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

` 40% WCDMA efficiency at +28 dBm Pout
` 14% WCDMA efficiency (85 mA total current) at +16 dBm Pout
` Linear operation in low-power mode up to +19 dBm
` Low quiescent current (Iccq): 25 mA in low-power mode
` Meets UMTS/WCDMA performance requirements
` Meets HSDPA performance requirements
` Single positive-supply operation with low power and shutdown modes
3.4V typical Vcc operation
Low Vref (2.85V) compatible with advanced handset chipsets
` Compact Lead-free compliant LCC package (4.0 x 4.0 x 1.5 mm nominal)
` Industry standard pinout
` Internally matched to 50 Ohms and DC blocked RF input/ output



Specifications

Symbol Parameter Value Units
VCC1, VCC2 Supply Voltages 5.0 V
Vref
Reference Voltage 2.6 to 3.5 V
Vmode Power Control Voltage 3.5 V
Pin RF Input Power +10 dBm
Tstg Storage Temperature -55 to +150
Note:
1: No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.



Description

The RMPA2263 Power Amplifier Module (PAM) is Fairchild's latest innovation in 50 Ohm matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA2263 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels (< +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC converters, are required to achieve this remarkable improvement in amplifier efficiency. Further, the 4x4 x 1.5 mm LCC package is pin-compatible and a drop-in replacement for last generation 4x 4 mm PAMs widely used today, minimizing the design time to apply this performance-enhancing technology. The multi-stage GaAs Microwave Monolithic Integrated Circuit (MMIC) is manufactured using Fairchild RF's InGaP Heterojunction Bipolar Transistor (HBT) process.




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