RMPA2265

RF Amplifier 1850-1910 MHZ/1920- 1980 MHZ DUAL BAND

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SeekIC No. : 00613089 Detail

RMPA2265: RF Amplifier 1850-1910 MHZ/1920- 1980 MHZ DUAL BAND

floor Price/Ceiling Price

Part Number:
RMPA2265
Mfg:
Fairchild Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Quick Details

Type : Power Amplifier Operating Frequency : 1980 MHz
Maximum Operating Temperature : + 85 C Mounting Style : SMD/SMT
Package / Case : LCC-8 Packaging : Reel    

Description

Noise Figure :
Bandwidth :
Output Intercept Point :
Operating Supply Voltage :
Supply Current :
Mounting Style : SMD/SMT
Maximum Operating Temperature : + 85 C
Packaging : Reel
Type : Power Amplifier
Operating Frequency : 1980 MHz
Package / Case : LCC-8


Features:

• Single positive-supply operation and low power and shutdown modes
• 42% WCDMA efficiency at +28 dBm average output power 19201980 MHz
• 39% WCDMA efficiency at 27.5 dBm average output power 18501910 MHz
• Meets UMTS/WCDMA performance requirements in both UMTS bands
• Compact, low-profile package(3.0 x 3.0 x 1.0 mm nominal)
• Internally matched to 50 and DC blocked RF input/ output



Specifications

Symbol Parameter Ratings Units
VCC1, VCC2 Supply Voltages 5.0 V
VREF
Reference Voltage 2.6 to 3.5 V
Vmode Power Control Voltage 3.5 V
PIN RF Input Power +10 dBm
TSTG Storage Temperature -55 to +150
Note:
1:No permanent damage with only one parameter set at extreme limit. Other parameters set to typical values.



Description

The RMPA2265 power amplifier module (PAM) is designed for WCDMA applications in both the 18501910 and 1920 1980 MHz bands. The 2 stage PAM is internally matched to 50 to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild's InGaP/GaAs Heterojunction Bipolar Transistor (HBT) process.




Parameters:

Technical/Catalog InformationRMPA2265
VendorFairchild Semiconductor (VA)
CategoryRF and RFID
Package / Case8-LCC
Voltage - Supply3V ~ 4.2V
Current - Supply45mA
Gain28dB
Frequency1.92GHz ~ 1.98GHz
RF TypeW-CDMA
PackagingCut Tape (CT)
Noise Figure4dB
P1db-
Test Frequency-
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names RMPA2265
RMPA2265
RMPA2265CT ND
RMPA2265CTND
RMPA2265CT



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