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RMPA27000

Features: • 18dB small signal gain (typ.)• 32.5dBm saturated power out (typ.)• DC Bias connections on top or bottom side• Circuit contains individual source vias• Chip size 4.00mm x 2.98mmSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage...

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SeekIC No. : 004478212 Detail

RMPA27000: Features: • 18dB small signal gain (typ.)• 32.5dBm saturated power out (typ.)• DC Bias connections on top or bottom side• Circuit contains individual source vias• Chip ...

RMPA27000 Data Sheet

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Part Number:
RMPA27000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 18dB small signal gain (typ.)
• 32.5dBm saturated power out (typ.)
• DC Bias connections on top or bottom side
• Circuit contains individual source vias
• Chip size 4.00mm x 2.98mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+5V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) +8 V
ID Positive DC Current 2450 mA
PIN RF Input Power (from 50 source)
 +22 dBm
TC Operating Baseplate Temperature -30 to +85
TSTG Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 5.6 /W



Description

The Fairchild Semiconductor's RMPA27000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA27000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.




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