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RMPA39000

Features: • 24dB small signal gain (typ.)• 29dBm saturated power out (typ.)• Circuit contains individual source vias• Chip size 4.28mm x 2.90mm x 50mSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage (+5V Typical) +6 V Vg Negative DC Volt...

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SeekIC No. : 004478215 Detail

RMPA39000: Features: • 24dB small signal gain (typ.)• 29dBm saturated power out (typ.)• Circuit contains individual source vias• Chip size 4.28mm x 2.90mm x 50mSpecifications Symbo...

RMPA39000 Data Sheet

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Part Number:
RMPA39000
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 24dB small signal gain (typ.)
• 29dBm saturated power out (typ.)
• Circuit contains individual source vias
• Chip size 4.28mm x 2.90mm x 50m


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+5V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) +8 V
ID Positive DC Current 1092 mA
PIN RF Input Power (from 50 source)
 20 dBm
TC Operating Baseplate Temperature -30 to +85
TSTG Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 17 /W



Description

The Fairchild Semiconductor RMPA39000 is a high efficiency power amplifier designed for use in point to point and point to multi-point radios, and various communications applications. The RMPA39000 is a 3-stage GaAs MMIC amplifier utilizing our advanced 0.15m gate length Power PHEMT process and can be used in conjunction with other driver or power amplifiers to achieve the required total power output.




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