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RMPA5252

Features: ·Full 4.9 to 5.9GHz operation·34dB small signal gain·3% EVM at 18dBm modulated power out·3.3V single positive supply operation·Integrated power detector with 20dB dynamic range·Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package·Internally matched to 50 Ohms and DC blocked RF input/...

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RMPA5252: Features: ·Full 4.9 to 5.9GHz operation·34dB small signal gain·3% EVM at 18dBm modulated power out·3.3V single positive supply operation·Integrated power detector with 20dB dynamic range·Lead-free R...

RMPA5252 Data Sheet

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Part Number:
RMPA5252
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

·Full 4.9 to 5.9GHz operation
·34dB small signal gain
·3% EVM at 18dBm modulated power out
·3.3V single positive supply operation
·Integrated power detector with 20dB dynamic range
·Lead-free RoHS compliant 3 x 3 x 0.9 mm leadless package
·Internally matched to 50 Ohms and DC blocked RF input/ output
·Optimized for use in 802.11a applications


Specifications

Symbol Parameter Ratings Units
VCC Positive Supply Voltage 5 V
ICC Supply Current 1000 mA
PC Positive Bias Voltage 4 V
PIN RF Input Power +5 dBm
TCASE Case Operating Temperature -40 to +85
TSTG Storage Temperature -55 to +150
Note:
1. No permanent damage with one parameter set at extreme limit. Other parameters set to typical values.


Description

The RMPA5252 power amplifier is designed for high performance WLAN applications in the 4.95.9 GHz frequency band. The low profile 16 pin 3 x 3 x 0.9 mm package with internal matching on both input and output to 50 Ohms minimizes next level PCB space and allows for simplified integration. An on-chip detector provides power sensing capability. The PA's low power consumption and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology.




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