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RMPA61810

Features: • 21dB Typical Small Signal Gain• 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR• 31dBm Output Power at 1dB Gain Compression• 32dBm Output Power at 3dB Gain Compression• 22% Typical Power Added Efficiency at 1dB Gain Compression• Chip size: 6.55mm...

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SeekIC No. : 004478219 Detail

RMPA61810: Features: • 21dB Typical Small Signal Gain• 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR• 31dBm Output Power at 1dB Gain Compression• 32dBm Output Power at 3dB Gain Co...

RMPA61810 Data Sheet

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Part Number:
RMPA61810
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 21dB Typical Small Signal Gain
• 2.0:1 Typical Input VSWR, 2.5:1 Typical Output VSWR
• 31dBm Output Power at 1dB Gain Compression
• 32dBm Output Power at 3dB Gain Compression
• 22% Typical Power Added Efficiency at 1dB Gain Compression
• Chip size: 6.55mm x 2.67mm x 0.1mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+5V Typical) 8.5 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) +10.5 V
PIN

 RF Input Power (from 50 source)
 27 dBm
Id Drain Current 1.2 A
TSTG
 Storage Temperature -55 to +125
TC
 Operating Baseplate Temperature -40 to +85
RJC Thermal Resistance (Channel to Backside) 12 /W



Description

The Fairchild Semiconductor RMPA61810 is a fully monolithic power amplifier operating over the 6.0 to 18.0 GHz frequency band. The amplifier uses a 0.25 micron Pseudomorphic High Electron Mobility Transistor (PHEMT) process to maximize efficiency and output power. The chip configuration incorporates two stages of reactively combined amplifiers at the output preceded by an input amplifier stage. This single channel amplifier provides typically, 21dB small signal gain and 31dBm output power at 1dB gain compression.




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