RMWM26001

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high therma conductivity such as copper molybdenum or copper  tungsten. The chip carrier should be machined,  finished  flat plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die  attachment  should  utilize Gold/Tin  (80/20)  eutectic  alloy  solder  and  should  avoid  hydrogen  environment  or
PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to preven static discharges through the device.

Recommended wire  bonding  uses  3 mils wide  and  0.5 mil  thick  gold  ribbon with  lengths  as  short  as  practica allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material.

The  RMWM26001  is  a  26  GHz  Mixer  designed  to  be  used  in  point  to  point  radios,  point  to  multi-point communications, LMDS, and other millimeter wave applications.    In conjunction with other Raytheon amplifiers,multipliers and mixers it forms part of a complete 23 and 26 GHz transmit/receive chipset. The RMWM26001 is a GaAs MMIC diode mixer utilizing Raytheon's 0.25µm power PHEMT process. The MMIC can be used as both an Upconverter and a Downconverter and is sufficiently versatile to serve in a variety of mixer applications.