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RMWP23001

Features: • 4mil substrate• Small-signal gain 22.5dB (typ.)• 1dB compressed Pout 23.5dBm (typ.)• Chip size 2.6mm x 1.2mmSpecifications Symbol Parameter Ratings Units Vd Positive DC Voltage (+4V Typical) +6 V Vg Negative DC Voltage -2 V Vdg Simultaneo...

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SeekIC No. : 004478235 Detail

RMWP23001: Features: • 4mil substrate• Small-signal gain 22.5dB (typ.)• 1dB compressed Pout 23.5dBm (typ.)• Chip size 2.6mm x 1.2mmSpecifications Symbol Parameter Ratings Units ...

RMWP23001 Data Sheet

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Part Number:
RMWP23001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

• 4mil substrate
• Small-signal gain 22.5dB (typ.)
• 1dB compressed Pout 23.5dBm (typ.)
• Chip size 2.6mm x 1.2mm


Specifications

Symbol Parameter Ratings Units
Vd Positive DC Voltage (+4V Typical) +6 V
Vg Negative DC Voltage -2 V
Vdg Simultaneous (VdVg) 8 V
ID

 Positive DC Current
 607 mA
PIN RF Input Power (from 50 source)
 +8 dBm
TC
 Operating Baseplate Temperature -30 to +85
TSTG
 Storage Temperature Range -55 to +125
RJC Thermal Resistance (Channel to Backside) 36.5 /W



Description

The RMWP23001 is a 4-stage GaAs MMIC amplifier designed as a 21 to 24 GHz Power Amplifier for use in point to point and point to multi-point radios, and various communications applications. In conjunction with other Fairchild Semiconductor amplifiers, multipliers and mixers it forms part of a complete 23 GHz transmit/receive chipset.

The RMWP23001 utilizes our 0.25m power PHEMT process and is sufficiently versatile to serve in a variety of power amplifier applications.




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