RMWW12001

Chip carrier material should be selected to have GaAs compatible thermal coefficient of expansion and high thermal conductivity such as copper molybdenum or copper  tungsten. The chip carrier should be machined,  finished  flat,plated with gold over nickel and should be capable of withstanding 325°C for 15 minutes.

Die  attachment  should  utilize Gold/Tin  (80/20)  eutectic  alloy  solder  and  should  avoid  hydrogen  environment  or PHEMT devices. Note that the backside of the chip is gold plated and is used as RF ground.

These GaAs devices should be handled with care and stored in dry nitrogen environment to prevent contamination of bonding surfaces. These are ESD sensitive devices and should be handled with appropriate precaution including the use of wrist grounding straps. All die attach and wire/ribbon bond equipment must be well grounded to prevent static discharges through the device.

Recommended wire  bonding  uses  3 mils wide  and  0.5 mil  thick  gold  ribbon with  lengths  as  short  as  practical allowing for appropriate stress relief. The RF input and output bonds should be typically 0.012" long corresponding to a typically 2 mil between the chip and the substrate material.

The RMWW12001 is a 12 to 24 GHz Doubler designed to be used in the LO chain of point to point radios, point to multi-point  communications, LMDS, and other millimeter wave  applications.  In  conjunction with  other Raytheon amplifiers,  multipliers  and  mixers  it  forms  part  of  a  complete  23  and  26  GHz  transmit/receive  chipset.  The RMWW12001 utilizes Raytheon's 0.25 µm power PHEMT process and is sufficiently versatile to serve in a variety of multiplier applications.