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RN1112FT

Application·High-density mount is possible because of devices housed in very thin TESM packages.·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.·Wide range of resistor values...

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RN1112FT: Application·High-density mount is possible because of devices housed in very thin TESM packages.·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable ...

RN1112FT Data Sheet

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Part Number:
RN1112FT
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Application

·High-density mount is possible because of devices housed in very thin TESM packages.
·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
·Wide range of resistor values are available to use in various circuit designs.
·Complementary to RN2112FT, RN2113FT


Specifications

Characteristic Symbol Rating Unit
Collector-base voltage VCBO 50 V
Collector-emitter voltage VCEO 50 V
Emitter-base voltage VEBO 5 V
Collector current IC 100 mA
Collector power dissipation PC(Note) 100 mW
Junction temperature Tj 150
Storage temperature range Tstg −55~125
Note: Total rating


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