RN2010

The RN2010 is a kind of transistor. It is a silicon NPN epitaxial type (PCT process). RN2010 is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features of RN2010 as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)complementary to RN1010.

What comes next is about the maximum ratings of RN2010 (Ta=25): (1)collector-base voltage, VCBO: -50 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -5 V; (4)collector current, IC: -100 mA; (5)collector power dissipation, PC: 400 mW; (6)junction temperature, Tj: 150; (7)storage temperature range, Tstg: -55 to 150.

The following is about the electrical characteristics of RN2010 (Ta=25): (1)collector cut-off current, ICBO: -100 nA at VCB=-50 V, IE=0;; (2)emitter cut-off current, IEBO: -100 nA max at VEB=-5 V, IC=0; (3)DC current gain, hFE: 120 min and 400 max at VCE=-5 V, IC=-1 mA; (4)collector-emitter saturation voltage, VCE(sat): -0.1 V typ and -0.3 V max at IC=-5 mA, IB=-0.25 mA; (6)transition frequency, fT: 200 MHz typ at VCE=-10 V, IC=-5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=-10 V, IE=0, f=1 MHz; (6)input resistor, R1: 3.29k min, 4.7k typ and 6.11k max.