Purchase RN4987FE, In-stock RN4987FE From SeekIC.
MFG:TOSHIBA Package Cooled:SOT-363 D/C:05+
- Table of contents:
RN4987FE
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Suppliers
DataSheet
General Description
RN4987FE Maximum Ratings
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | 50 | V |
| Collector-emitter voltage | VCEO | 50 | V |
| Emitter-base voltage | VEBO | 6 | V |
| Collector current | IC | 100 | mA |
| Characteristic | Symbol | Rating | Unit |
| Collector-base voltage | VCBO | -50 | V |
| Collector-emitter voltage | VCEO | -50 | V |
| Emitter-base voltage | VEBO | -6 | V |
| Collector current | IC | -100 | mA |
| Characteristic | Symbol | Rating | Unit |
| Collector power dissipation | PC (Note) | 100 | mW |
| Junction temperature | Tj | 150 | |
| Storage temperature range | Tstg | −55~150 |
RN4987FE Typical Application
· Two devices are incorporated into an Extreme-Super-Mini (6 pin) package.
·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
·Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost.
RN4987FE
PDF/DataSheet Download
- Datasheet: RN4987FE
- File Size: 88773 KB
- Manufacturer: TOSHIBA [Toshiba Semiconductor]
- Click here to Download
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- TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-92
- 144625 KB
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- TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-92
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- ·RN4060
- TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-92
- 144625 KB
- ·RN4061
- TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-92
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- ·RN4062
- TRANSISTOR | BJT | PNP | 30V V(BR)CEO | 30MA I(C) | TO-92
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- TOSHIBA [Toshiba Semiconductor]
- Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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- ·RN4602
- TOSHIBA [Toshiba Semiconductor]
- Switching, Inverter Circuit, Interface Circuit And Driver Circuit Applications
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- ·RN4603
- Toshiba
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