RN4990

DescriptionThe RN4990 is a kind of transistor. RN4990 includes a silicon NPN epitaxial type (PCT process) and a silicon PNP epitaxial type (PCT process). RN4990 is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features of RN4990 as foll...

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SeekIC No. : 004478612 Detail

RN4990: DescriptionThe RN4990 is a kind of transistor. RN4990 includes a silicon NPN epitaxial type (PCT process) and a silicon PNP epitaxial type (PCT process). RN4990 is intended for switching, inverter c...

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Part Number:
RN4990
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/21

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Product Details

Description



Description

The RN4990 is a kind of transistor. RN4990 includes a silicon NPN epitaxial type (PCT process) and a silicon PNP epitaxial type (PCT process). RN4990 is intended for switching, inverter circuit, interface circuit and driver circuit applications. There are some features of RN4990  as follows: (1)with built-in bias resistors; (2)simplify circuit design; (3)reduce a quantity of parts and manufacturing process; (4)including two devices in US6 (ultra mini type with 6 leads).

What comes next is about the maximum ratings of RN4990  (Ta=25). First is about the Q1 section: (1)collector-base voltage, VCBO: 50 V; (2)collector-emitter voltage, VCEO: 50 V; (3)emitter-base voltage, VEBO: 5 V; (4)collector current, IC: 100 mA. Then is about the Q2 section: (1)collector-base voltage, VCBO: -50 V; (2)collector-emitter voltage, VCEO: -50 V; (3)emitter-base voltage, VEBO: -5 V; (4)collector current, IC: -100 mA. The last one is about the Q1, Q2 common maximum ratings: (1)collector power dissipation, PC: 200 mW; (2)junction temperature, Tj: 150; (3)storage temperature range, Tstg: -55 to 150.


The following is about the electrical characteristics of RN4990  (Ta=25). First is about the Q1 section: (1)collector cut-off current, ICBO: 100 mA at VCB=50 V, IE=0; (2)emitter cut-off current, IEBO: 100 mA max at VEB=10 V, IC=0; (3)DC current gain, hFE: 120 min and 700 max at VCE=5 V, IC=1 mA; (4)collector-emitter saturation voltage, VCE(sat): 0.1 V typ and 0.3 V max at IC=5 mA, IB=0.25 mA; (6)transition frequency, fT: 250 MHz typ at VCE=10 V, IC=5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=10 V, IE=0, f=1 MHz. Then is about the Q2 section: (1)collector cut-off current, ICBO: -100 mA at VCB=-50 V, IE=0; (2)emitter cut-off current, IEBO: -100 mA max at VEB=-5 V, IC=0; (3)DC current gain, hFE: 120 min and 400 max at VCE=-5 V, IC=-1 mA; (4)collector-emitter saturation voltage, VCE(sat): -0.1 V typ and -0.3 V max at IC=-5 mA, IB=-0.25 mA; (6)transition frequency, fT: 200 MHz typ at VCE=-10 V, IC=-5 mA; (5)collector output capacitance, Cob: 3 pF typ and 6 pF max at VCB=-10 V, IE=0, f=1 MHz. The input resistor, R1: 3.29k min, 4.7k typ and 6.11k max.




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