RPI-125

Series: -
Output Configuration: Phototransistor
Mounting Type: Through Hole
Manufacturer: Rohm Semiconductor
Sensing Distance: 0.047" (1.2mm)
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Response Time: 10µs
Package / Case: Slotted Module
Current - DC Forward (If): 50mA
Sensing Method: -
Packaging: Bulk


Features:

· Ultra-small.
· Gap 1.2mm.


Application

·DSC(Digital steal camera)
·DVC(Digital video camera)
·Digital handy phone


Specifications

Parameter		Symbol	Limits	Unit
input(LED)	Forward current	IF	50	mA
	Reverse voltage	VR	5	V
	Power dissipation	PD	80	mW
Output(photo transistor)	Collector-emitter voltage	VCEO	30	V
	Emitter-collector voltage	VECO	4.5	V
	Collector current	IC	30	mA
	Collector power dissipation	PC	80	mW
Operating temperature		Topr	−25to+85	°C
Storage temperature		Tstg	−30to+85	°C
Soldering temperature		Tsol	260/5	°C/sec