RPI-579N1

Series: -
Sensing Method: Transmissive
Output Configuration: Phototransistor
Mounting Type: Through Hole
Package / Case: PCB Mount
Packaging: Tube
Manufacturer: Rohm Semiconductor
Current - Collector (Ic) (Max): 30mA
Voltage - Collector Emitter Breakdown (Max): 30V
Response Time: 10µs
Current - DC Forward (If): 50mA
Sensing Distance: 0.197" (5mm)


Features:

· Heat resistance (170°C).
· Small gap (0.5mm) and good accuracy.
· Quick response time.
· Filter against visible ray is built-in.
· Kinked forming.


Application

·Printers
·Facsimiles
·AV equipment


Specifications

Parameter		Symbol	Limits	Unit
Input (LED)	Forward current	IC	50	mA
	Reverse voltage	VCEO	5	V
	Power dissipation	PD	80	mW
Output (phototransistor)	Collector-emitter voltage	VR	30	V
	Emitter-collector voltage	IF	4.5	V
	Collector current	PC	30	mA
	Collector power dissipation	VECO	80	mW
Operating temperature		Topr	260 / 3	°C
Storage temperature		Tstg	−25 to +85	°C
Soldering temperture		Tsol	−40 to +85	°C / s

Parameters:

Technical/Catalog Information	RPI-579N1
Vendor	Rohm Semiconductor
Category	Sensors, Transducers
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	RPI 579N1 RPI579N1 511 1475 ND 5111475ND 511-1475