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RQK0604IGDQA

Features: • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS 60 V and capable of 2.5 V gate driveSpecifications Item Symbol Ratings Unit Drain to source voltage VDSS 60 V Gate to s...

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RQK0604IGDQA: Features: • Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A) • Low drive current • High speed switching • VDSS 60 V and capable of 2.5 V gate driveSpe...

RQK0604IGDQA Data Sheet

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Part Number:
RQK0604IGDQA
Supply Ability:
5000

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  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

•  Low on-resistance RDS(on) = 111 mΩ typ.(at VGS = 4.5 V, ID = 1 A)
•  Low drive current 
•  High speed switching
•  VDSS 60 V and capable of 2.5 V gate drive 
 


Specifications

Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±12 V
Drain current ID 2 A
Drain peak current ID(pulse) Note1
 8 A
Body - drain diode reverse drain current IDR 2 A
Channel dissipation Pch Note2
 0.8 W
Channel temperature Tch 150
Storage temperature Tstg 55 to +150
Notes: 1. PW 10 µs, Duty cycle 1%
            2.  When using the glass epoxy board (FR-4 40 * 40 * 1 mm) 
 


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