Features: • Small, thin and leadless type package (3 * 3 mm, t = 0.8 mm max.) • Two FET chips are mounted in one package • High density mounting • High speed switching. (Ciss = 200 pF typ) • VDSS 60 V and capable of 2.5 V gate driveSpecifications Item Symbol R...
RQM2201DNS: Features: • Small, thin and leadless type package (3 * 3 mm, t = 0.8 mm max.) • Two FET chips are mounted in one package • High density mounting • High speed switching. (Ciss...
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| Item | Symbol | Ratings | Unit |
| Drain to source voltage | VDSS | 60 | V |
| Gate to source voltage | VGSS | ±12 | V |
| Drain current | ID | 2 | A |
| Drain peak current | ID(pulse) Note1 |
8 | A |
| Body - drain diode reverse drain current | IDR | 2 | A |
| Channel dissipation | Pch Note2 |
1 | W |
| Channel dissipation | Pch Note3 |
1.5 | W |
| Channel temperature | Tch | 150 | |
| Storage temperature | Tstg | 55 to +150 |