RSF05G1-1P

The RSF05G1-1P is a kind of thyrisitor. It is silicon planar type. The device is designed for low power switching and control applications. There are some features as follows: (1)repetitive peak off-state voltage: VDRM=400 V; repetitive peak reverse voltage: VRRM=400 V; (2)average on-state current: IT(AV)=500 mA; (3)plastic mold type; (4)reduce a quantity of parts and manufacturing process because of built-in RGK: RGK=1k, 2.7k, 5.1 (typical).

What comes next is about the maximum ratings of RSF05G1-1P: (1)repetitive peak off-state voltage and repetitive peak reverse voltage, VDRM, VRRM: 400 V; (2)non-repetitive peak reverse voltage (non-repetitive<5 ms, Tj=0 to 125), VDSM: 500 V; (3)average on-state current (half sine waveform), IT(AV): 500 mA; (4)R.M.S on-state current, IT(RMS): 800 mA; (5)peak one cycle surge on-state current (non-repetitive), ITSM: 9 A when 50 Hz and 10 A when 60 Hz; (6)critical rate of rise of on-state current, di/dt: 10 A/s; (7)peak gate power dissipation, PGM: 0.1 W; (8)average gate power dissipation, PG(AV): 0.01 W; (9)peak forward gate voltage, VFGM: 3.5 W; (10)peak reverse gate voltage, VRGM: -5 V; (11)peak forward gate current, IGM: 125 mA; (12)junction temperature, Tj: -40 to 125; (13)storage temperature, Tstg: -40 to 125.

The following is about the electrical characteristics of RSF05G1-1P(Ta=25): (1)repetitive peak off-state current and repetitive peak reverse current, IDRM, IRRM: 10A max when VDRM=VRRM=rated; (2)peak on-state voltage, VTM: 1.5 V at ITM=1 A; (3)gate trigger voltage, VGT: 0.4 V min and 0.8 V max at VD=6 V, RL=100; (4)holding current, IH: 6 mA at ITM=1 A, VD=6 V; (5)resistor between gate and cathode, RGK: 700 min, 1000 typ and 1300 max; (6)critical rate of rise of on-state voltage, dv/dt: 200 V/s typ when VDRM=rated exponential rise; (7)gate turn-on time. tgt: 1.5s max at VD=rated, iG=5 mA; (8)thermal resistance, junction to lead, Rth(j-l): 40/W max when DC; (9)thermal resistance, junction to ambient, Rth(j-a): 180/W max when DC.