MOSFET P-CH 30V 2.5A TSMT6
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 30 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | +/- 2.5 A | ||
| Resistance Drain-Source RDS (on) : | 0.145 Ohms | Configuration : | Single Quad Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TSMT-6 | Packaging : | Reel |
| Technical/Catalog Information | RSQ025P03TR |
| Vendor | Rohm Semiconductor(VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 30V |
| Current - Continuous Drain (Id) @ 25° C | 2.5A |
| Rds On (Max) @ Id, Vgs | 110 mOhm @ 2.5A, 10V |
| Input Capacitance (Ciss) @ Vds | 320pF @ 10V |
| Power - Max | 1.25W |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 4.4nC @ 5V |
| Package / Case | TSMT6 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RSQ025P03TR RSQ025P03TR RSQ025P03CT ND RSQ025P03CTND RSQ025P03CT |