MOSFET P Chan-12V-5A Mid-PowerSwitching
RT1A050ZPTR: MOSFET P Chan-12V-5A Mid-PowerSwitching
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 12 V | ||
| Gate-Source Breakdown Voltage : | +/- 10 V | Continuous Drain Current : | 5 A | ||
| Resistance Drain-Source RDS (on) : | 26 mOhms at 4.5 V | Configuration : | Single Hex Drain | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TSST-8 | Packaging : | Reel |
| Technical/Catalog Information | RT1A050ZPTR |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 12V |
| Current - Continuous Drain (Id) @ 25° C | 5A |
| Rds On (Max) @ Id, Vgs | 26 mOhm @ 5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 2800pF @ 6V |
| Power - Max | 1.25W |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 34nC @ 4.5V |
| Package / Case | * |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RT1A050ZPTR RT1A050ZPTR |