MOSFET P-CH 20V 1A TUMT3
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | - 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 12 V | Continuous Drain Current : | +/- 1 A | ||
| Resistance Drain-Source RDS (on) : | 0.57 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | TUMT-3 | Packaging : | Reel |
| Technical/Catalog Information | RTF010P02TL |
| Vendor | Rohm Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 1A |
| Rds On (Max) @ Id, Vgs | 390 mOhm @ 1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 150pF @ 10V |
| Power - Max | 800mW |
| Packaging | Tape & Reel (TR) |
| Gate Charge (Qg) @ Vgs | 2.1nC @ 4.5V |
| Package / Case | TUMT3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | RTF010P02TL RTF010P02TL RTF010P02TLTR ND RTF010P02TLTRND RTF010P02TLTR |