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RW1A020ZPT2R

MOSFET P-CH 12V 2A WEMT6

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SeekIC No. : 003430577 Detail

RW1A020ZPT2R: MOSFET P-CH 12V 2A WEMT6

RW1A020ZPT2R Data Sheet

floor Price/Ceiling Price

US $ .11~.11 / Piece | Get Latest Price
Part Number:
RW1A020ZPT2R
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 0~8000
  • Unit Price
  • $.11
  • Processing time
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Quick Details

Series: - Manufacturer: Rohm Semiconductor
FET Type: MOSFET P-Channel, Metal Oxide Transistor Type: -
Current - Collector (Ic) (Max): - FET Feature: Logic Level Gate
Drain to Source Voltage (Vdss): 12V Continuous Drain Current : 15 A
Voltage - Collector Emitter Breakdown (Max): - Current - Continuous Drain (Id) @ 25° C: 2A
Vce Saturation (Max) @ Ib, Ic: - Current - Collector Cutoff (Max): -
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V DC Current Gain (hFE) (Min) @ Ic, Vce: -
Vgs(th) (Max) @ Id: 1V @ 1mA Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V
Frequency - Transition: - Input Capacitance (Ciss) @ Vds: 770pF @ 6V
Power - Max: 700mW Mounting Type: Surface Mount
Package / Case: 6-WEMT Supplier Device Package: 6-WEMT    

Description

Series: -
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
FET Type: MOSFET P-Channel, Metal Oxide
Power - Max: 700mW
Drain to Source Voltage (Vdss): 12V
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25° C: 2A
Vgs(th) (Max) @ Id: 1V @ 1mA
Manufacturer: Rohm Semiconductor
Rds On (Max) @ Id, Vgs: 105 mOhm @ 2A, 4.5V
Gate Charge (Qg) @ Vgs: 6.5nC @ 4.5V
Input Capacitance (Ciss) @ Vds: 770pF @ 6V
Package / Case: 6-WEMT
Supplier Device Package: 6-WEMT


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