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RX1214B300Y

Features: • Interdigitated structure provides high emitter efficiency• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR• Gold metallization realizes very stable characteristics and excellent lifetime• Multicell geometry ...

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SeekIC No. : 004480542 Detail

RX1214B300Y: Features: • Interdigitated structure provides high emitter efficiency• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR• Gold ...

RX1214B300Y Data Sheet

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Part Number:
RX1214B300Y
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

• Interdigitated structure provides high emitter efficiency
• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR
• Gold metallization realizes very stable characteristics and excellent lifetime
• Multicell geometry improves power sharing and reduces thermal resistance
• Internal input and output matching networks for an easy circuit design.




Application

· Common base class-C wideband amplifiers operating under pulsed conditions, recommended for L-band radar applications.


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 65 V
VCES collector-emitter voltage RBE =0 Ω - 60 V
VEBO emitter-base voltage open collector - 3 V
IC collector current (DC) tp 150 µs; =5% - 21 A
Ptot total power dissipation

tp 150 µs; =5%; Tmb =75

- 570 W
Tstg storage temperature   -65 +200
Tj operating junction temperature   - 200
Tsld soldering temperature at 0.2 mm from case; t 10 s - 235



Description

NPN silicon planar epitaxial microwave power transistor in a RX1214B300Y metal ceramic flange package with the base connected to the flange.


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