RXB12350Y

The RXB12350Y is designed as one kind of NPN silicon planar epitaxial microwave power transistor with six features such as:(1)suitable for short and medium pulse applications up to 1 ms/15%;(2)internal input prematching networks allow an easier design of circuits;(3)diffused emitter ballasting resistors improve ruggedness;(4)interdigitated emitter-base structure provides high emitter efficiency;(5)gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime;(6)multicell geometry improves power sharing and reduces thermal resistance.

The absolute maximum ratings of the RXB12350Y can be summarized as:(1)collector-base voltage:65 V;(2)collector-emitter voltage(open base):15 V;(3)collector-emitter voltage(Rbe=0):60 V;(4)emitter-base voltage:3 V;(5)storage temperature range:-65 to 200;(6)junction temperature:200;(7)soldering temperature:235.If you want to know more information such as the quick reference data .etc about this RXB12350Y,please download the datasheet in www.seekic.com and www.chinaicmart.com