RZB06050W

The RZB06050W has the following features including Suitable for short and medium pulse applications up to 1 ms/10%;Internal input prematching networks allow an easier design of circuits;Diffused emitter ballasting resistors Improve ruggedness;interdigitated emitter-base structure provides high emitter efficiency;Gold metallization with barrier realizes very good stability of the characteristics and excellent lifetime;Multicell geometry improves power sharing and reduces thermal resistance.

NPN silicon planar epitaxial microwave power transistor RZB06050W in a FO-57C metal ceramic flange package with base connected to flange.Intended for use in common base, class C, broadband, pulsed power amplifiers for radar applications in the 540 to 610 MHz band. Also suitable for medium pulse, heavy duty operation within this band.This product contains beryllium oxide. The product is entirely safe provided that the Be0 slab is not damaged. All persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of the user. It must never be thrown out with the general or domestic waste.Operating conditions and performances for other pulse formats can be made available on request.

The RZB06050W consists of two circuits (input and output), each being 55 mm x 70 mm in size. The two circuits are mounted on a 10 mm thick hard aluminium alloy block. A recess should be machined in the aluminium block in which the transistor can be mounted. The mounting surface must be lapped to a surface roughness of Ra<0.5 mm and the sum of the depth of the recess and the thickness of the circuits should not exceed the specified minimum dimension between mounting face and the leads of the transistor. Tolerances on this dimension may be absorbed by placing a gold plated metal shim under the leads, close to the body of the transistor.