S-22H10IF10

The S-22H10IF10 is designed as a non-volatile CMOS RAM, composed of a CMOS static RAM and a non-volatile electrically erasable and programmable memory (E2PROM) to backup the SRAM. Its organization would be 64-word x 4-bit (total 256 bits).

S-22H10IF10 has eight features. (1)256 bits TTL input, compatible with the X2210 of xicor. (2)Erroneous store protection is 3.5V. (3)+5V single power supply. (4)Low current consumption would be 10mA typ operating and 1uA max for standby. (5)Access time is 200ns max. (6)E2PROM store cycles is 10^5 times. (7)E2PROM data retention 10 years. (8)18-pin DIP/SOP package. Those are all the main features.

Some absolute maximum ratings of S-22H10IF10 have been concluded into several points as follow. (1)Its power supply voltage would be from -0.3V to 6.0V. (2)Its input voltage would be from -0.3V to Vcc+0.3V. (3)Its output voltage would be 0V to Vcc. (4)Its storage temperature under bias would be from -50°C to 95°C. (5)Its storage temperature range would be from -65°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S-22H10IF10 are concluded as follow. (1)Its operating current consumption would be typ 10mA and max 30mA. (2)Its standby current would be max 1uA. (3)Its input leakage current would be typ 0.1uA and max 1uA. (4)Its output leakage current would be typ 0.1uA and max 1uA. (5)Its low level output voltage would be max 0.1V for CMOS and would be max 0.4V for TTL. (6)Its high level output voltage would be min Vcc-0.7V for CMOS and would be min 2.4V for TTL. (7)Its store inhibition voltage would be typ 3.5V and max 4.1V. (8)Its schmitt width would be min 0.4V. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!