S01DTP06

Features: High gain Low VCE(sat) Simplified circuit design Reduced component countApplication Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid drivingPinoutDescriptionThe STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufac...

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S01DTP06 Picture
SeekIC No. : 004480897 Detail

S01DTP06: Features: High gain Low VCE(sat) Simplified circuit design Reduced component countApplication Push-Pull or Totem-Pole configuration MOSFET and IGBT gate driving Motor, relay and solenoid drivingPin...

floor Price/Ceiling Price

Part Number:
S01DTP06
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/27

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Product Details

Description



Features:

High gain
Low VCE(sat)
Simplified circuit design
Reduced component count



Application

Push-Pull or Totem-Pole configuration
MOSFET and IGBT gate driving
Motor, relay and solenoid driving



Pinout

  Connection Diagram


Description

The STS01DTP06 is a Hybrid dual NPN-PNP complementary power bipolar transistor manufactured by using the latest low voltage planar techlogy. The STS01DTP06 is housed in dual island SO-8 package with separated terminals for higher assembly flexibility, specifically recommended to be used in Push-Pull or Totem Pole configuration as post IGBTs and MOSFETs driver.




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