S10A70

The S10A70 is using the schottky barrier principle with a molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polanty protection diodes.

The features of S10A70 can be summarized as (1)low forward voltag; (2)low switching noise; (3)high current capacity; (4)guarantee reverse avalance; (5)guard-ring for stress protection; (6)low power loss & high efficiency; (7)125°C operating junction temperature; (8)low stored charge majority carrier cnduction; (9)plastic material used carries undewvriters laboratory flammability classification 94V-O.

The absolute maximum ratings of S10A70 are (1)peak repetitive reverse voltage VRRM and working peak reverse voltage VRWM and DC blocking voltage VR: 70V; (2)RMS reverse voltage VR(RMS): 49V; (3)average rectifier forward current: 10 A; (4)peak repetitive fonrvard current (rate VR, square wave,20kHz )IFRM: 20A; (5)non-repetitive peak surge current ( surge applied at rate load conditions halfware,single phase,60Hz ) IFSM: 175A; (6)operating and storage junction temperature rangeTJ, Tstg: - 65 to + 125°C.