S10C30A

Description

The S10C30A uses the schottky barrier principle with a molybdenum barrier metal. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact.

The features of S10C30A can be summarized as (1)low forward voltag; (2)low switching noise; (3)high current capacity; (4)guarantee reverse avalance; (5)guard-ring for stress protection; (6)low power loss & high efficiency; (7)125°C operating junction temperature; (8)low stored charge majority carrier cnduction; (9)plastic material used carries undewvriters laboratory; (10)flammability classitication 94V-O.

The absolute maximum ratings of S10C30A are (1)peak repetitive reverse voltage VRRM: 30V; (2)working peak reverse voltage VRWM: 30V; (3)DC blocking voltage VR: 30V; (4)RMS reverse voltage VR(RMS): 21V; (5)average rectitier forward current/total device (rated VR),Tc=100°C IF(AV): 5.0/10A; (6)peak repetitive forward current (rate VR,square wave,20kHz ) IFM: 10A; (7)non-repetitive peak surge current ( Surge applied at rate load conditions halfware,single phase,60Hz ) IFSM: 125A; (8)operating and storage junction temperature range of the S10C30A: - 65 to + 125°C.