Description The S10S70 is a kind of D2 power rectifier employs the schottky barroer principle with a molybdenum barrier mental. If you want know more about this IC, please go to our website. The features of S10S70 can be summarized as (1)low forward voltage; (2)low switching noise; (3)high cu...
S10S70: Description The S10S70 is a kind of D2 power rectifier employs the schottky barroer principle with a molybdenum barrier mental. If you want know more about this IC, please go to our website. Th...
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The features of S10S70 can be summarized as (1)low forward voltage; (2)low switching noise; (3)high current capacity; (4)guarantee reverse avalance; (5)guard-ring for stress protection; (6)low power loss & high efficiency; (7)125°C operating junction temperature; (8)low stored charge majority carrier cnduction; (9)plastic material used carries undewvriters laboratory; (10)flammability classitication 94V-O.
The absolute maximum ratings of S10S70 are (1)peak repetitive reverse voltage VRRM: 70V; (2)working peak reverse voltage VRWM: 70V; (3)DC blocking voltage VR: 70V; (4)RMS reverse voltage VR(RMS): 49V; (5)average rectitier forward current/total device (rated VR),Tc=100°C IF(AV): 5.0/10A; (6)peak repetitive forward current (rate VR,square wave,20kHz ) IFM: 10A; (7)non-repetitive peak surge current ( Surge applied at rate load conditions halfware,single phase,60Hz ) IFSM: 125A; (8)operating and storage junction temperature range of the S10S70: - 65 to + 125°C.