S1210BM

The S1210BM is designed as one kind of silicon controlled rectifier device that is intended for hybrid applications. This device has some points of absolute maximum ratings:(1)on-state current: 12 A;(2)average on-state current: 7.6 A;(3)nonrept. on-state current: 132 A or 120 A;(4)fusing current: 72;(5)peak gate current: 4 A;(6)peak gate dissipation: 10 W;(7)gate dissipation: 1 W;(8)operating temperature: -40 to +125;(9)storage temperature: -40 to +150;(10)case temperature: - .

The electrical characteristics of this S1210BM can be summarized as:(1)off-state leakage current: 1.5 mA or 5.0 uA;(2)on-state voltage: 1.80 V;(3)on-state threshold voltage: 1.0 V;(4)on-state slope resistance: 36 m;(5)gate trigger current: 10 to 25 mA;(6)gate trigger voltage: 2.0 V;(7)holding current: 38 mA;(8)latching current: 75 mA;(9)critical rate of voltage rise: 200 V/us;(10)critical rate of current rise: 100 A/us. If you want to know more information such as the electrical characteristics about the S1210BM, please download the datasheet in www.seekic.com or www.chinaicmart.com.