S200-50

The S200-50 is designed as a common emitter, HF, SSB device intended for operation from a 50V supply. It may be operated in class A, AB or C. The device exhibits excellent linearity and ruggedness.

Some absolute maximum ratings of S200-50 have been concluded into several points as follow. (1)Its maximum power dissipation at 25°C case temperature would be 320W. (2)Its collector to emitter voltage would be 110V. (3)Its emitter to base voltage would be 4.0V. (4)Its collector current would be 30A. (5)Its storage temperature range would be from -65°C to 150°C. (6)Its operating junction temperature would be 200°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S200-50 are concluded as follow. (1)Its power output would be min 200W at f=30MHz and Vc=50V. (2)Its power input would be max 12W at f=30MHz and Vc=50V. (3)Its power gain would be min 12dB with conditions pf f=30MHz and Vc=50V. (4)Its load mismatch tolerance would be max 30:1. (5)Its collector efficiency would be typ 60%. (6)Its emitter to base breakdown voltage would be min 4.0V at Ie=20mA. (7)Its collector to emitter breakdown voltage would be min 110V at Ic=100mA. (8)Its collector to emitter breakdown voltage would be min 70V at Ic=200mA. (9)Its intermodulation distortion level would be typ -34dBc and max -32dBc at rated power out. (10)Its capacitance collector to base would be typ 300pF. (11)Its thermal resistance would be max 0.55°C/W. (12)Its DC current gain would be min 10 with conditions of Vc=5V and Ic=1A. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please visit our website and contact us for details. Thank you!