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S21MD4V

Features: 1. Built-in zero-cross circuit2. High critical rate of rise of OFF-state volt-age ( dV/dt : MIN. 100V/ s )3. High repetitive peak OFF-state voltage( VDRM : MIN. 600V )4. Isolation voltage between input and output Viso:5 000Vrms5. UL recognized, file No. E64380 (S21MD4V/ S21MD4W)*S21MD4V ...

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SeekIC No. : 004481613 Detail

S21MD4V: Features: 1. Built-in zero-cross circuit2. High critical rate of rise of OFF-state volt-age ( dV/dt : MIN. 100V/ s )3. High repetitive peak OFF-state voltage( VDRM : MIN. 600V )4. Isolation voltage ...

S21MD4V Data Sheet

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Part Number:
S21MD4V
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/17

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Product Details

Description



Features:

1. Built-in zero-cross circuit
2. High critical rate of rise of OFF-state volt-age ( dV/dt : MIN. 100V/ s )
3. High repetitive peak OFF-state voltage( VDRM : MIN. 600V )
4. Isolation voltage between input and output Viso:5 000Vrms
5. UL recognized, file No. E64380 (S21MD4V/ S21MD4W)
* S21MD4V is for 200V line


Application

1. For triggering medium/high power triac


Specifications

Parameter
Symbol
Rating
Unit
Input Forward current
IF
50
mA
Reverse voltage
VR
6
V
Output RMS ON-state current
IT
100
Arms
*1Peak one cycle surge current
Isurge
1.2
A
Repetitive peak OFF-state voltage
VDRM
600
V
*2 Isolation voltage
Viso
5,000
Vrms
Operating temperature
Topr
- 30 to + 100
°C
Storage temperature
Tstg
- 55 to + 125
°C
*3 Soldering temperature
Tsol
260
°C
*1 Sine wave
*2 40 to 60% RH, AC for 1 minute, f = 60HZ
*3 For 10 seconds


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