Purchase S21MD9T, In-stock S21MD9T From SeekIC.
MFG:SHARP D/C:02+
- Table of contents:
S21MD9T
-
Suppliers
DataSheet
General Description
S21MD9T Maximum Ratings
|
Parameter |
Symbol |
Rating |
Unit | ||
|
S11MD7T/S11MD8T S11MD9T |
S21MD7T/S21MD8T/ S21MD9T | ||||
| Input | Forward current |
IF |
50 |
mA | |
| Reverse voltage |
VR |
6 |
V | ||
| Output | RMS ON-state current |
IT |
0.1 |
ARMS | |
| *1Peak one cycle surge current |
Isurge |
1.2 |
A | ||
| Repetitive peak OFF-state voltage |
VDRM |
400 |
600 |
V | |
|
*2 Isolation voltage |
Viso |
5000 |
VRMS | ||
|
Operating temperature |
TOPR |
- 30 to +100 |
|||
|
Storage temperatrue |
TSTG |
- 55 to +125 |
|||
|
*3 Soldering temperature |
TSOL |
260 |
|||
*1 50Hz Sine wave
*2 40 to 60% RH, AC for 1 minute, f= 60Hz
*3 For 10 seconds
S21MD9T Features
·Low input driving current (S11MD7T/ S11MD8T/ S21MD7T/ S21MD8T IFT : MAX. 5mA S11MD9T /S21MD9T IFT : AX.7mA )
·Pin No. 5 completely molded for external noise resistance
·Built-in zero-cross circuit (S11MD8T/S21MD8T)
·High repetitive peak OFF-state voltage (S11MD7T / S11MD8T / S11MD9T VDRM : MIN. 400V S21MD7T / S21MD8T / S21MD9T VDRM : MIN. 600V)
·Isolation voltage between input and output (Viso: 5000VRMS)
·Recognized by UL, file No.E64380
·Pin No. 5 completely molded for external noise resistance
·Built-in zero-cross circuit (S11MD8T/S21MD8T)
·High repetitive peak OFF-state voltage (S11MD7T / S11MD8T / S11MD9T VDRM : MIN. 400V S21MD7T / S21MD8T / S21MD9T VDRM : MIN. 600V)
·Isolation voltage between input and output (Viso: 5000VRMS)
·Recognized by UL, file No.E64380
S21MD9T Typical Application
·For triggering medium/high power triacs
S21MD9T
PDF/DataSheet Download
- Datasheet: S21MD9T
- File Size: 63673 KB
- Manufacturer: SHARP [Sharp Electrionic Components]
- Click here to Download
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