S2370

The S2370 is designed as one kind of toshiba field effect transistor of silicon N channel MOS type. Its applications include high speed, high current switching applications, chopper regulator, DC-DC converter and motor drive applications.

S2370 has four features. (1)Low drain-source ON resistance is 0.03ohms typ. (2)High forward transfer admittance would be 13S typ. (3)Low leakage current is +/-100nA max  at Vgs=+/-20V for Igss and would be 300uA max at Vds=60V for Idss. (4)Enhancement mode is 1.5V to 3.5V at Vds=10V and Id=1mA. Those are all the main features.

Some absolute maximum ratings of S2370 have been concluded into several points as follow. (1)Its drain to source voltage would be 60V. (2)Its drain to gate voltage at Rgs=20kohms would be 60V. (3)Its gate to source voltage would be +/-20V. (4)Its drain current DC would be 40A and pulse would be 160A. (5)Its drain power dissipation would be 125W. (6)Its channel temperature would be 150°C. (7)Its storage temperature range would be from -55°C to 150°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S2370 are concluded as follow. (1)Its gate leakage current would be max +/-100mA. (2)Its drain cut-off current would be max 300uA. (3)Its drain-source breakdown voltage would be min 60V. (4)Its gate threshold voltage would be min 1.5V and max 3.5V. (5)Its forward transfer admittance would be min 9.0S and typ 13S. (6)Its drain to source ON resistance would be typ 0.03ohms and max 0.045ohms. (7)Its input capacitance would be typ 2100pF and max 2700pF. (8)Its reverse transfer capacitance would be max 1000pF. (9)Its output capacitance would be typ 2000pF and max 2800pF. (10)Its switching time is typ 45ns for rise and 65ns for turn-on and 25ns for fall and 80ns for turn-off. And so on. If you have any question or suggestion or want to know more information please contact us for details. Thank you!