S250-50

The S250-50 is designed as a 50V 250W (PEP) NPN silicon RF power transistor for 1.5MHz to 30MHz linear applications. Gold metallization and difussed resistors assure optimum reliability and ruggedness.

Some absolute maximum ratings of S250-50 have been concluded into several points as follow. (1)Its maximum power dissipation at 25°C case temperature would be 440W. (2)Its collector to emitter voltage would be 110V. (3)Its emitter to base voltage would be 4.0V. (4)Its collector current would be 30A. (5)Its storage temperature range would be from -65°C to 150°C. (6)Its operating junction temperature would be 200°C. It should be noted that stresses above those listed in absolute maximum ratings may cause permanent damage to device.

Also some electrical characteristics of S250-50 are concluded as follow. (1)Its power output would be min 250W. (2)Its power input would be max 8W. (3)Its power gain would be min1 5dB. (4)Its collector efficiency would be typ 60%. (5)Its load mismatch capability would be max 30:1. (6)Its breakdown voltage emitter to base would be min 4V. (7)Its breakdown voltage collector to emitter would be min 110V with conditions of Vbe=0 and Ic=200mA and it would be min 53V with conditions of Ib=0A and Ic=200mA. (8)Its collector to emitter leakage current would be max 60mA. (9)Its 3rd order products would be typ -32dBc and max -30dBc. (10)Its capacitance collector to base would be typ 280pF and max 300pF. (11)Its DC current gain would be min 10 and typ 20 and max 60 with conditions of Vce=5V and Ic=1V. (12)Its series input impedance would be typ 2.2-j3.3 ohms. (13)Its thermal resistance would be max 0.4°C/W. And so on. At present we have not got so much information about this IC and we would try hard to get more information about it. If you have any question or suggestion or want to know more information please contact us for details. Thank you!