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S2800N

Specifications Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1)(TJ = 25 to 100°C, Gate Open) S2800 FABDMN VRRMVDRM 50100200400600800 V Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1) S2800 FABDMN VR...

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S2800N: Specifications Rating Symbol Value Unit Peak Repetitive Forward and Reverse Blocking Voltage(1)(TJ = 25 to 100°C, Gate Open) S2800 FABDMN VRRMVDRM 50100200400600800 V ...

S2800N Data Sheet

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Part Number:
S2800N
Supply Ability:
5000

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Total Cost: $ 0.00

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Product Details

Description



Specifications

Rating
Symbol
Value
Unit
Peak Repetitive Forward and Reverse Blocking Voltage(1)
(TJ = 25 to 100°C, Gate Open)
S2800 F
A
B
D
M
N
VRRM
VDRM
50
100
200
400
600
800
V
Peak Non-repetitive Reverse Voltage and Non-Repetitive Off-State Voltage(1)
S2800 F
A
B
D
M
N
VRSM
VDSM
75
125
250
500
700
900
V
RMS Forward Current
(All Conduction Angles) TC = 75°C
IT(RMS)
10
A
Peak Forward Surge Current (1 Cycle, Sine Wave, 60 Hz, TC = 80°C)
ITSM
100
A
Circuit Fusing Considerations (t = 8.3 ms)
I2t
40
A2s
Forward Peak Gate Power (t 10 s)
PGM
16
W
Forward Average Gate Power
PG(AV)
0.5
W
Operating Junction Temperature Range
TJ
40 to +100
°C
Storage Temperature Range
Tstg
40 to +150
°C

1. VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.




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