S29CD016J

Features: The S29CD016J & S29CL016J Flash devices are burst mode, dual boot, simultaneous read/write Flash memories with VersatileI/O™ manufactured on 110 nm process technology.The S29CD016J is a 16 megabit, 2.6 volt-only, single-power-supply, burst mode Flash memory device that can be c...

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SeekIC No. : 004481786 Detail

S29CD016J: Features: The S29CD016J & S29CL016J Flash devices are burst mode, dual boot, simultaneous read/write Flash memories with VersatileI/O™ manufactured on 110 nm process technology.The S29CD01...

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Part Number:
S29CD016J
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

The S29CD016J & S29CL016J Flash devices are burst mode, dual boot, simultaneous read/write Flash memories with VersatileI/O™ manufactured on 110 nm process technology.

The S29CD016J is a 16 megabit, 2.6 volt-only, single-power-supply, burst mode Flash memory device that can be configured for 524,288 double words. The S29CL016J is the 3.3 volt-only version of that device. Both devices can be programmed in standard EPROM programmers.

To eliminate bus contention, each device has separate chip enable (CE#), write enable (WE#) and outputenable (OE#) controls. Additional control inputs are required for synchronous burst operations: Load Burst Address Valid (ADV#), and Clock (CLK).

Each device requires only a single 2.6 volt-only (2.50 V 2.75 V) or 3.3 volt-only (3.00 V 3.60 V) for both read and write functions. A 12.0-volt VPP is not required for program or erase operations, although an acceleration pin is available if faster programming performance is required.

The device is entirely command set compatible with the JEDEC single-power-supply Flash standard. The software command set is compatible with the command sets of the 5 V Am29F and 3 V Am29LV Flash families. Commands are written to the command register using standard micro-processor write timing.Register contents serve as inputs to an internal state-machine that controls the erase and programming circuitry. Write cycles also internally latch addresses and data needed for the programming and erase operations. Reading data out of the device is similar to reading from other Flash or EPROM devices.




Specifications

Parameter Rating
Storage Temperature 65°C to +150°C
Ambient Temperature with Power Applied 65°C to +145°C
VCC, VIO (Note 1) S29CD016J 0.5 V to + 3.0 V
VCC, VIO (Note 1) S29CL016J 0.5 V to + 3.6 V
ACC, A9, OE#, and RESET# (Note 2) 0.5 V to +13.0 V
Address, Data, Control Signals (with the exception of CLK) (Note1) 0.5 V to + 3.6 V
All other pins (Note1) 0.5 V to + 3.6 V
Output Short Circuit Current (Note3) 200 mA

Notes
1. Minimum DC voltage on input or I/O pins is 0.5 V. During voltage transitions, input at I/O pins may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7.1. Maximum DC voltage on output and I/O pins is 3.0 V. During oltage transitions output pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 9.

2. Minimum DC input voltage on pins ACC, A9, OE#, and RESET# is 0.5 V. During voltage transitions, A9, OE#, and RESET# may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7.2. Maximum DC input voltage on pin A9 and OE# is +13.0 V which may
overshoot to 13.7 V for periods up to 20 ns.

3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only;functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.




Description

The Spansion S29CD016J and S29CL016J devices are Floating Gate products fabricated in 110 nm process  echnology.

These burst mode Flash devices S29CD016J are capable of performing simultaneous read and write operations with zero latency on two separate banks. These products can operate up to 56 MHz and use a single VCC of 2.5 V to 2.75 V (S29CD-J) or 3.0 V to 3.6 V (S29CL-J) that make them ideal for today's demanding automotive applications.




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