S29GL-N

Storage Temperature, Plastic Packages. . . . . .. . 65°C to +150°C
Ambient Temperature with Power Applied. . . . .. 65°C to +125°C
Voltage with Respect to Ground:
V_CC (Note 1). . . . . . . . . . . . . . . . . . . . . . . . . . . .  . .0.5 V to +4.0 V
V_IO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .0.5 V to +4.0 V
A9, OE#, and ACC (Note 2) . . . . . . . . . . . . . . .  . .0.5 V to +12.5 V
All other pins (Note 1) . . . . . . . . . . . . . . . . . .  0.5 V to V_CC + 0.5V
Output Short Circuit Current (Note 3) . . . . . . . . . . . . . . . .. . 200 mA

Notes:
1. Minimum DC voltage on input or I/Os is 0.5 V. During voltage transitions, inputs or I/Os may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7, on page 73. Maximum DC voltage on input or I/Os is VCC + 0.5 V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0 V for periods up to 20 ns. See Figure 8, on page 73.
2. Minimum DC input voltage on pins A9, OE#, and ACC is 0.5 V. During voltage transitions, A9, OE#, and ACC may overshoot VSS to 2.0 V for periods of up to 20 ns. See Figure 7, on page 73. Maximum DC input voltage on pin A9, OE#, and ACC is +12.5 V which may overshoot to +14.0V for periods up to 20 ns.

3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second.

4. Stresses above those listed under Absolute Maximum Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of this data sheet is not implied. Exposure of the device to absolute maximum rating conditions for extended periods may affect device reliability.

The S29GL-N devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers. Access times of S29GL-N as fast as 90 ns (S29GL128N, S29GL256N), 100 ns (S29GL512N) are available.

Note that each access time of S29GL-N has a specific operating voltage range (VCC) and an I/O voltage range (VIO), as specified in the Product Selector Guide‚ on page 6 and the Ordering Information‚ on page 12. The devices are offered in a 56-pin TSOP or 64-ball Fortified BGA package. Each device has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls. Each device S29GL-N requires only a single 3.0 volt power supply for both read and write functions.

In addition to a VCC input, a high-voltage accelerated program (WP#/ACC) input of S29GL-N provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

The S29GL-N are entirely command set compatible with the JEDEC single-power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture of S29GL-N allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.

Device programming and erasure of S29GL-N are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready/Busy# (RY/BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence overhead by requiring only two write cycles to program data instead of four.

The Enhanced VersatileI/O™ (VIO) control of S29GL-N allows the host system to set the voltage levels that the device generates and tolerates on all input levels (address, chip control, and DQ input levels) to the same voltage level that is asserted on the VIO pin. This allows the device to operate in a 1.8 V or 3 V system environment as required.

Hardware data protection measures of S29GL-N include a low VCC detector that automatically inhibits write operations during power transitions. Persistent Sector Protection provides in-system, command-enabled protection of any combination of sectors using a single power supply at VCC. Password Sector Protection prevents unauthorized write and erase operations in any combination of sectors through a user-defined 64-bit password.

The Erase Suspend/Erase Resume feature of S29GL-N allows the host system to pause an erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend/Program Resume feature enables the host system to pause a program operation in a given sector to read any other sector and then complete the program operation.

The hardware RESET# pin of S29GL-N terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device.

The S29GL-N reduces power consumption in the standby mode when it detects specific voltage levels on CE# and RESET#, or when addresses have been stable for a specified period of time.

The Secured Silicon Sector of S29GL-N provides a 128-word/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur.

The Write Protect (WP#/ACC) feature of S29GL-N protects the first or last sector by asserting a logic low on the WP# pin.

MirrorBit flash technology of S29GL-N  combines years of Flash memory manufacturing experience to produce the highest levels of quality, reliability and cost effectiveness. The device electrically erases all bits within a sector simultaneously via hot-hole assisted erase. The data is programmed using hot electron injection.