S29GL128N

    The S29GL128N devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL128N can be programmed either in the host system or in standard EPROM programmers.

    The S29GL128N devices are 3.0V single power flash memory manufactured using 110 nm MirrorBit technology. The S29GL512N is a 512 Mbit, organized as 33,554,432 words or 67,108,864 bytes. The S29GL256N is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128N is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The devices have a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL128N can be programmed either in the host system or in standard EPROM programmers.