S29GL128P10TFI02

The S29GL128P10TFI02 is a kind of 128 Megabit 3.0 volt-only page mode flash memory. It is designed for today's embedded applications that require higher density, better performance and lower power consumption. Besides, it is available in 56-pin TSOP package.

There are some distinctive characteristics of S29GL128P10TFI02 as follows. (1) 90 nm MirrorBit process technology; (2) 8-word/16-byte page read buffer; (3) 32-word/64-byte write buffer reduces overall programming time for multiple-word updates; (4) uniform 64Kword/128KByte sector architecture: one hundred twenty-eight sectors; (5) 100,000 erase cycles per sector typical; (6) 20-year data retention typical; (7) suspend and resume commands for program and erase operations; (8) write operation status bits indicate program and erase operation completion;(9) unlock Bypass Program command to reduce programming time; (10) support for CFI (Common Flash Interface); (11) persistent and password methods of advanced sector protection; (12) hardware reset input (RESET#) resets device; (13) ready/busy# output (RY/BY#) detects program or erase cycle completion.

What comes next is about the absolute maximum ratings of S29GL128P10TFI02. (1): all inputs and I/Os except as noted below is from 0.5 to VCC + 0.5 V; (2): VCC (voltage with respect to ground) is from -0.5 to +4.0 V; (3): VIO (voltage with respect to ground) is from -0.5 to +4.0 V; (4): A9 and ACC (voltage with respect to ground) is from -0.5 to +12.5 V; (5): output short circuit current is 200 mA; (6): storage temperature, plastic packages is from -65 to +150; (7): ambient temperature with power applied is from -65 to +125.