S29GL256M

Features: Software features -Program Suspend & Resume: read other sectors before programming operation is completed -Erase Suspend & Resume: read/program other sectors before an erase operation is completed -Data# polling & toggle bits provide status -CFI (Common Flash Interface) compliant: allows...

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SeekIC No. : 004481814 Detail

S29GL256M: Features: Software features -Program Suspend & Resume: read other sectors before programming operation is completed -Erase Suspend & Resume: read/program other sectors before an erase operation is c...

floor Price/Ceiling Price

Part Number:
S29GL256M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/26

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Product Details

Description



Features:

Software features
    -Program Suspend & Resume: read other sectors before programming operation is completed
    -Erase Suspend & Resume: read/program other sectors before an erase operation is completed
    -Data# polling & toggle bits provide status
    -CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices
    -Unlock Bypass Program command reduces overall multiple-word programming time
Hardware features
    -Sector Group Protection: hardware-level method of preventing write operations within a sector group
    -Temporary Sector Unprotect: VID-level method of charging code in locked sectors
    -WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last          sector regardless of sector protection settings on uniform sector models
    -Hardware reset input (RESET#) resets device
    -Ready/Busy# output (RY/BY#) detects program or erase cycle completion



Specifications

Storage Temperature, Plastic Packages. . . . . . . . . . . . . . . . 65°C to +150°C
Ambient Temperature with Power Applied. . . . . . . . . . . . . . 65°C to +125°C
Voltage with Respect to Ground: VCC (Note 1). . . . . . . . . . . .0.5 V to +4.0 V 
                  A9, OE#, ACC and RESET# (Note 2) . . . . . . . . .0.5 V to +12.5 V
                    All other pins (Note 1). . . . . . . . . . . . . . . . .  0.5 V to VCC+0.5 V
Output Short Circuit Current (Note 3). . . . . . . . . . . . . . . . . . . . . . . . 200 mA



Description

The S29GL256/128/064/032M family of devices are 3.0 V single power Flash memory manufactured using 0.23 um MirrorBit technology. The S29GL256M is a 256 Mbit, organized as 16,777,216 words or 33,554,432 bytes. The S29GL128M is a 128 Mbit, organized as 8,388,608 words or 16,777,216 bytes. The S29GL064M is a 64 Mbit, or-ganized as 4,194,304 words or 8,388,608 bytes. The S29GL032M is a 32 Mbit, organized as 2,097,152 words or 4,194,304 bytes. Depending on the model number, the S29GL256M have an 8-bit wide data bus only, 16-bit wide data bus only, or a 16-bit wide data bus that can also function as an 8-bit wide data bus by using the BYTE# input. The S29GL256M can be programmed either in the host system or in standard EPROM programmers.

Access times of S29GL256M as fast as 90 ns (S29GL128M, S29GL064M, S29GL032M) or 100 ns (S29GL256M) are available. Note that each access time has a specific operating voltage range (VCC) as specified in the Product Selector Guide and the Ordering Information sections. Package offerings include 40-pin TSOP, 48-pin TSOP, 56-pin TSOP, 48-ball fine-pitch BGA, 63-ball fine-pitch BGA and 64-ball Fortified BGA, depending on model number. Each device S29GL256M has sepa-rate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.

Each device S29GL256M requires only a single 3.0 volt power supply for both read and write functions. In addition to a VCCinput, a high-voltage accelerated program (ACC) feature provides shorter programming times through in-creased current on the WP#/ACC input. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired.

The S29GL256M is entirely command set compatible with the JEDEC single-power-supply Flash standard. Com-mands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations.

The sector erase architecture of S29GL256M allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory.




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