DescriptionThe S29L128N11FI010 is designed as one kind of 128/128/64/32 Mbit, 3.0 volt-only page mode and simultaneous read/write flash memory device. This device offers fast page access times of 20 to 30 ns with corresponding random access times of 55 to 70 ns, and requires a single 3.0 volt power supply (2.7 V to 3.6 V) for both read and write functions.
Features of the S29L128N11FI010 are:(1)Single power supply operation: Full Voltage range: 2.7 to 3.6 volt read, erase, and program operations for battery-powered applications;(2)Dual Chip Enable inputs (only in PL129J): Two CE# inputs control selection of each half of the memory space;(3)Both top and bottom boot blocks in one device;(4)Manufactured on 110 nm process technology;(5)Data Retention: 20 years typical;(6)Cycling Endurance: 1 million cycles per sector typical;(7)High Performance: Page access times as fast as 20 ns and Random access times as fast as 55 ns;(8)Power consumption (typical values at 10 MHz).
The absolute maximum ratings of the S29L128N11FI010 can be summarized as:(1)Storage Temperature Plastic Packages:65°C to +150°C;(2)Ambient Temperature with Power Applied: 65°C to +125°C;(3)Vcc: -0.5 V to +4.0 V;(4)A9, OE#, and RESET#: -0.5 V to +13.0 V;(5)WP#/ACC:0.5 V to +10.5 V;(6)All other pins:0.5 V to VCC +0.5 V;(7)Output Short Circuit Current: 200 mA.
The electrical characteristics of this S29L128N11FI010 can be summarized as:(1)Input Load Current: ±1.0 A;(2)A9, OE#, RESET# Input Load Current: 35 A;(3)Reset Leakage Current:35 A;(4)Output Leakage Current: ±1.0 A;(5)Vcc Active Write Current: 15 to 25 mA;(6)Vcc Standby Current: 0.2 to 5 A;(7)Automatic Sleep Mode: 0.2 to 5 A;(8)Vcc Active Read-While-Program Current: 21 to 70 mA;(9)Voltage for ACC Program Acceleration: 8.5 to 9.5 V;(10)Voltage for Autoselect and Temporary Sector Unprotect: 11.5 to 12.5 V. If you want to know more information about S29L128N11FI010, please download the datasheet in www.seekic.com or www.chinaicmart.com .
S29L128N11FI010 Data Sheet
