DescriptionThe S29WS064J is a 128/64 Mbit, 1.8 Volt-only, simultaneous Read/Write,Burst Mode Flash memory device, organized as 8,388,608/4,194,304 words of 16 bits each. This device uses a single Vcc of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VHH on ACC may be used...
S29WS064J: DescriptionThe S29WS064J is a 128/64 Mbit, 1.8 Volt-only, simultaneous Read/Write,Burst Mode Flash memory device, organized as 8,388,608/4,194,304 words of 16 bits each. This device uses a single Vc...
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The S29WS064J is a 128/64 Mbit, 1.8 Volt-only, simultaneous Read/Write,Burst Mode Flash memory device, organized as 8,388,608/4,194,304 words of 16 bits each. This device uses a single Vcc of 1.65 to 1.95 V to read, program, and erase the memory array. A 12.0-volt VHH on ACC may be used for faster program performance if desired. The S29WS064J can also be programmed in standard EPROM programmers.
Features of the S29WS064J are:(1)single 1.8 volt read, program and erase (1.65 to 1.95 volt); (2)manufactured on 0.11 Nm process technology; (3)simultaneous read/write operation; (4)cyclling endurance:1,000,000 cycles per sector typical; (5)data retention:20-years typical; (6)data can be continuously read from one bank while executing erase/program functions in other bank; (7)Zero latency between read and write operations.The burst read mode feature gives system designers flexibility in the interface to the device. The user can preset the burst length and wrap through the same memory space, or read the flash array in continuous mode.After an erase command sequence is written, if all sectors of S29WS064J selected for erasing are protected, DQ6 toggles for approximately 100 Ns, then returns to reading array data.If not all selected sectors are protected, the Embedded Erase algorithm erases the unprotected sectors, and ignores the selected sectors that are protected.
The absolute maximum ratings of the S29WS064J can be summarized as:(1)all inputs and I/Os except as noted below:-0.5 V to Vcc+0.5 V;(2)storage temperature:-65 to 150;(3)Vcc:-0.5 to +2.5V;(4)output short circuit current:100 mA;(5)ambient temperature with power applied:-65 to +125.However, if after the initial two read cycles, the system determines that the toggle bit is still toggling, the system also should note whether the value of DQ5 is high (see the section on DQ5).If it is, the system should then determine again whether the toggle bit is toggling, since the toggle bit may have stopped toggling just as DQ5 went high. If the toggle bit is no longer toggling, the device has successfully completed the program or erase operation. If it is still toggling, the S29WS064J did not completed the operation successfully, and the system must write the reset command to return to reading array data.