Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• High AGC-range with less steep slope• Integrated gate protection diodes• Low noise figure• High gain, very high forward transadmittance (40 mS typ.)• Improved cross modulation at gain ...
S503TXRW: Features: • Easy Gate 1 switch-off with PNP switching transistors inside PLL• High AGC-range with less steep slope• Integrated gate protection diodes• Low noise figure•...
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| Parameter | Test condition |
Symbol |
Value |
Unit |
| Drain - source voltage |
VDS |
8 |
V | |
| Drain current |
ID |
30 |
mA | |
| Gate 1/Gate 2 - source peak current |
± IG1/G2SM |
10 |
mA | |
| Gate 1 - source voltage |
+ VG1S |
6 |
V | |
|
- VG1S |
1.5 |
V | ||
| Gate 2 - source voltage |
± VG2SM |
6 |
V | |
| Total power dissipation | Tamb 60 °C |
Ptot |
200 |
mW |
| Channel temperature |
TCh |
150 |
||
| Storage temperature range |
Tstg |
- 55 to + 150 |