DescriptionThe S50D30 is designed as one kind of schottky barrier rectifier device that features epitaxial construction with oxide passivation and metal overlay contact. Also this device can be used in low voltage, high frequency rectification, or as free wheeling and polarity protection diodes. ...
S50D30: DescriptionThe S50D30 is designed as one kind of schottky barrier rectifier device that features epitaxial construction with oxide passivation and metal overlay contact. Also this device can be used...
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The S50D30 is designed as one kind of schottky barrier rectifier device that features epitaxial construction with oxide passivation and metal overlay contact. Also this device can be used in low voltage, high frequency rectification, or as free wheeling and polarity protection diodes.
Features of the S50D30 are:(1)low forward voltage;(2)low switching noise;(3)high current capacity;(4)guarantee reverse avalance;(5)guard-ring for stress protection;(6)low power loss and high efficiency;(7)125 operating junction temperature;(8)low stored charge majority carrier conduction;(9)plastic material used carries underwriters laboratory flammability classification 94V-O.
The absolute maximum ratings of the S50D30 can be summarized as:(1)peak repetitive reverse voltage: 30 V;(2)working peak reverse voltage: 30 V;(3)DC blocking voltage: 30 V;(4)RMS reverse voltage: 21 V;(5)average rectifier forward current: 25 A;(6)peak repetitive forward current: 50 A;(7)non-repetitive pask surge current (surge applied at rate load conditions halfware, single phase, 60 Hz): 400 A;(8)operating and storage junction temperature range: -65 to +125. If you want to know more information about S50D30, please download the datasheet in www.seekic.com or www.chinaicmart.com .