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S6A13

Application`FWD included between cathode and anode`Critical rate of rise of ON-state current: di/dt = 750 A/s`Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s)`Repetitive peak OFF-state voltage: VDRM = 800 V`Gate trigger current: IGT = 30 mA max.Specifications Characteristic ...

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S6A13: Application`FWD included between cathode and anode`Critical rate of rise of ON-state current: di/dt = 750 A/s`Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s)`Repetitive peak OFF-stat...

S6A13 Data Sheet

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Part Number:
S6A13
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5000

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Upload time: 2025/12/26

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Product Details

Description



Application

`FWD included between cathode and anode
`Critical rate of rise of ON-state current: di/dt = 750 A/s
`Repetitive peak surge ON-state current: ITRM = 500 A (tw = 2 s)
`Repetitive peak OFF-state voltage: VDRM = 800 V
`Gate trigger current: IGT = 30 mA max.


Specifications

Characteristic
Symbol
Rating
Unit
Repetitive peak OFF-state voltage
VDRM
800
V
Repetitive peak surge ON-state current (Note)
ITRM
500
A
Repetitive peak surge forward current
(Note))
IFRM
500
A
Critical rate of rise of ON-state current
(Note)
di/dt
750
A/s
Peak gate power dissipation
PGM
5
W
Average gate power dissipation
PG(AV)
0.5
W
Peak forward gate voltage
VFGM
10
V
Peak reverse gate voltage
VRGM
-5
V
Peak forward gate current
IGM
2
A
Junction temperature
Tj
-40~125
Storage temperature range
Tstg
-40~150

Note: VD 0.8*rated,Tc = 85,igp 60 mA,tgw 10 s,tgr 150 ns


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