DescriptionThe S9013LT1 is designed as one kind of NPN general purpose transistor device that has some points of maximum ratings:(1)collector-emitter voltage: 25 Vdc;(2)collector-base voltage: 40 Vdc;(3)emitter-base voltage: 5.0 Vdc;(4)collector current-continuous: 500 mAdc. The electrical charac...
S9013LT1: DescriptionThe S9013LT1 is designed as one kind of NPN general purpose transistor device that has some points of maximum ratings:(1)collector-emitter voltage: 25 Vdc;(2)collector-base voltage: 40 Vd...
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The S9013LT1 is designed as one kind of NPN general purpose transistor device that has some points of maximum ratings:(1)collector-emitter voltage: 25 Vdc;(2)collector-base voltage: 40 Vdc;(3)emitter-base voltage: 5.0 Vdc;(4)collector current-continuous: 500 mAdc.
The electrical characteristics of the S9013LT1 can be summarized as:(1)total device dissipation FR-5 board: 225 mW;(2)thermal resistance, junction to ambient: 556 /W;(3)total device dissipation: 300 mW;(4)thermal resistance, junction to ambient: 417 /W;(5)junction and storage temperature: -55 to +150 .
The electrical characteristics of this device can be summarized as:(1)collector-emitter breakdown voltage: 25 Vdc;(2)collector-base breakdown voltage: 40 Vdc;(3)emitter-base breakdown voltage: 5.0 Vdc;(4)collector cutoff current: 0.1 uAdc;(5)collector cutoff current: 0.1 uAdc;(6)emitter cutoff current: 0.1 uAdc. If you want to know more information about the S9013LT1, please download the datasheet in www.seekic.com or www.chinaicmart.com .