Features: `LNA Mixer integration.` Typical conversion gain of 7 dB.` Typical Two-Tone IM Ratio of 50 dBm.` LO Drive-Level: +13 dBm.` Surface Mount QSOP16 Package.` Low Cost/High Performance.` 50 ohm Nominal Impedance.Specifications Parameter Absolute Maximum RF Input Power 9 +17 dBm ...
SA65-0003: Features: `LNA Mixer integration.` Typical conversion gain of 7 dB.` Typical Two-Tone IM Ratio of 50 dBm.` LO Drive-Level: +13 dBm.` Surface Mount QSOP16 Package.` Low Cost/High Performance.` 50 oh...
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| Parameter | Absolute Maximum |
| RF Input Power 9 | +17 dBm |
| LO Drive Power 9 | +23 dBm |
| VDD | +10 VDC |
| Current 10 | 80 mA |
| Channel Temperature 11 | +150°C |
| Operating Temperature | -40°C to +85°C |
| Storage Temperature | -65°C to +150°C |
M/A-COM's SA65-0003 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This device is packaged in a 16-leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of the integrated combination is typically 6 dB at +3V bias and 8 dB at +5V bias. The SA65-0003 is ideally suited for RF/IF communications applications requiring down conversion with some gain.
This MCM SA65-0003 contains a mixer that is fabricated using a mature 1-micron GaAs process, it also contains an LNA that is fabricated using a low cost mature 0.5-micron gate length GaAs MESFET process. Both die feature full passivation for increased performance and reliability.