SA65-0003

Features: `LNA Mixer integration.` Typical conversion gain of 7 dB.` Typical Two-Tone IM Ratio of 50 dBm.` LO Drive-Level: +13 dBm.` Surface Mount QSOP16 Package.` Low Cost/High Performance.` 50 ohm Nominal Impedance.Specifications Parameter Absolute Maximum RF Input Power 9 +17 dBm ...

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SeekIC No. : 004483786 Detail

SA65-0003: Features: `LNA Mixer integration.` Typical conversion gain of 7 dB.` Typical Two-Tone IM Ratio of 50 dBm.` LO Drive-Level: +13 dBm.` Surface Mount QSOP16 Package.` Low Cost/High Performance.` 50 oh...

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Part Number:
SA65-0003
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2026/1/20

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Product Details

Description



Features:

`LNA Mixer integration.
` Typical conversion gain of 7 dB.
` Typical Two-Tone IM Ratio of 50 dBm.
` LO Drive-Level: +13 dBm.
` Surface Mount QSOP16 Package.
` Low Cost/High Performance.
` 50 ohm Nominal Impedance.



Specifications

Parameter Absolute Maximum
RF Input Power 9 +17 dBm
LO Drive Power 9 +23 dBm
VDD +10 VDC
Current 10 80 mA
Channel Temperature 11 +150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

8. Operation of this device above any one of these parameters may cause permanent damange.
9. Total power for RF and LO ports should not exceed +23 dBm.
10. When pin #2 is used to increase current-see note 6 above.
11. Thermal resistance (?jc) = +95°C/W.



Description

M/A-COM's SA65-0003 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This device is packaged in a 16-leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of the integrated combination is typically 6 dB at +3V bias and 8 dB at +5V bias. The SA65-0003 is ideally suited for RF/IF communications applications requiring down conversion with some gain.

This MCM SA65-0003 contains a mixer that is fabricated using a mature 1-micron GaAs process, it also contains an LNA that is fabricated using a low cost mature 0.5-micron gate length GaAs MESFET process. Both die feature full passivation for increased performance and reliability.




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