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Part Number: SA65-0003

 

 

 

 

Description: M/A-COM's SA65-0003 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This ...


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SA65-0003 General Description


M/A-COM's SA65-0003 is an integrated assembly containing a GaAs FET MMIC LNA and GaAs FET mixer. This device is packaged in a 16-leaded QSOP plastic surface mount package. The amplifier can be biased with either +3V or +5V, the mixer requires no DC bias. The conversion gain of the integrated combination is typically 6 dB at +3V bias and 8 dB at +5V bias. The SA65-0003 is ideally suited for RF/IF communications applications requiring down conversion with some gain.

This MCM contains a mixer that is fabricated using a mature 1-micron GaAs process, it also contains an LNA that is fabricated using a low cost mature 0.5-micron gate length GaAs MESFET process. Both die feature full passivation for increased performance and reliability.

SA65-0003 Maximum Ratings

Parameter Absolute Maximum
RF Input Power 9 +17 dBm
LO Drive Power 9 +23 dBm
VDD +10 VDC
Current 10 80 mA
Channel Temperature 11 +150°C
Operating Temperature -40°C to +85°C
Storage Temperature -65°C to +150°C

8. Operation of this device above any one of these parameters may cause permanent damange.
9. Total power for RF and LO ports should not exceed +23 dBm.
10. When pin #2 is used to increase current-see note 6 above.
11. Thermal resistance (?jc) = +95°C/W.

SA65-0003 Features

`LNA Mixer integration.
` Typical conversion gain of 7 dB.
` Typical Two-Tone IM Ratio of 50 dBm.
` LO Drive-Level: +13 dBm.
` Surface Mount QSOP16 Package.
` Low Cost/High Performance.
` 50 ohm Nominal Impedance.

SA65-0003 datasheet

SA65-0003
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